Model | MFCVD-Ⅰ/ MFCVD-Ⅱ |
Microwave characteristics | 2450MHz(220V);power:4KW,stepless adjustable |
Resonant chamber | 304 stainless steel resonant chamber & special waveguide to avoid electron back bombardment |
Four heating modes | pure microwave heating, traditional electric heating, mixed heating, and microwave plasma. |
Double heating chambers | Upper plasma/heating chamber, lower sample stage heating chamber |
Sample chamber materials | quartz tube:suitable for microwave plasma working mode quartz tube or & corundum tube: suitable for pure microwave, traditional electric heating and mixed heating working modes |
Diameter of sample chamber tube / mm | Diameter of quartz tube (1100℃):Φ45mm, Φ60mm, orΦ100 mm, optional. Diameter of corundum tube (1500℃):Φ45mm, Φ60mm, optional. |
Length of sample chamber | 100~300mm, optional |
Maximum working temperature of sample stage | Room temperature~1100℃, higher temperatures are optional. Temperature control accuracy (temperature fluctuations): ±1℃, touch screen control |
Maximum heating rate | <200℃/min (except microwave plasma operation mode), programmed automatic control |
Mass flow controller | 2 sets, standard Qixinghuachuang flow controller (post vacuum protection valve); precision: 0.8%; maximum pressure: 1MPa; control response time: 10ms; gas type optional;computer and control software; Built in & real time display & Saving & calling of growth parameters. |
Super-clean vacuum unit | 100Pa level, vortex pump+ digital vacuum gauge, optional 10-3Pa level, vortex pump+ molecular pump +compound vacuum gauge, optional |
Gas inlets | 304 stainless steel KF50 flange & ports, inlets/outlets reserved for inflating of a variety of gas, gas circuit & gas cabinet & all kinds of valves. |
Structure of model Ⅰ | Horizontal structure: gas flow direction is parallel to the sample surface on sample stage |
Structure of model Ⅱ | Vertical structure: gas flow direction is perpendicular to the sample surface on sample stage |
Applications | This instrument can be used as traditional CVD equipment, microwave energy CVD equipment as well as microwave plasma CVD system. Thus, it can be used for the growth of various functional films such as graphene, diamond, various semiconducting films, magnetic films, etc. |